IRFH5110TR2PBF
Infineon Technologies
Deutsch
Artikelnummer: | IRFH5110TR2PBF |
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Hersteller / Marke: | Cypress Semiconductor (Infineon Technologies) |
Teil der Beschreibung.: | MOSFET N-CH 100V 5X6 PQFN |
Datenblätte: |
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RoHs Status: | Lead free / RoHs compliant |
ECAD -Modell: | |
Zahlungsmittel: | PayPal / Credit Card / T/T |
Versandweg: | DHL / Fedex / TNT / UPS / EMS |
Aktie: |
Ship From: Hong Kong
Online -RFQ -Einreichungen: Schnelle Antworten, bessere Preise!
Produkteigenschaften | Eigenschaften |
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VGS (th) (Max) @ Id | 4V @ 100µA |
Technologie | MOSFET (Metal Oxide) |
Supplier Device-Gehäuse | 8-PQFN (5x6) |
Serie | - |
Rds On (Max) @ Id, Vgs | 12.4mOhm @ 37A, 10V |
Verpackung / Gehäuse | 8-PowerVDFN |
Paket | Cut Tape (CT) |
Befestigungsart | Surface Mount |
Produkteigenschaften | Eigenschaften |
---|---|
Eingabekapazität (Ciss) (Max) @ Vds | 3152 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Typ FET | N-Channel |
FET-Merkmal | - |
Drain-Source-Spannung (Vdss) | 100 V |
Strom - Ununterbrochener Abfluss (Id) bei 25 ° C | 11A (Ta), 63A (Tc) |
IRFH5110TR2PBF Einzelheiten PDF [English] | IRFH5110TR2PBF PDF - EN.pdf |
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